Study of Random Dopant Fluctuation Induced Variability in...

IEEE Electron Device Letters 2013 / 02 Vol. 34; Iss. 2

Study of Random Dopant Fluctuation Induced Variability in the Raised-Ge-Source TFET

Damrongplasit, Nattapol, Kim, Sung Hwan, Liu, Tsu-Jae King
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2235404
Date:
February, 2013
File:
PDF, 376 KB
english, 2013
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