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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Improvement Effect of Electrical Properties in Post-Annealed Wafer-Bonded Ge(001)-OI Substrate
Yamasaka, Shuto, Nakamura, Yoshiaki, Yoshitake, Osamu, Kikkawa, Jun, Izunome, Koji, Sakai, AkiraYear:
2012
Language:
english
DOI:
10.1109/istdm.2012.6222498
File:
PDF, 524 KB
english, 2012