[IEEE GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 - San Diego, CA, USA (29 Oct.-1 Nov. 1995)] GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 - Ion-implanted WN 0.25 μm gate MESFET fabricated using i-line photolithography for application to MMIC and digital IC
Eung-Gie Oh,, Jeon-Wook Yang,, Chul-Soon Park,, Kwang-Eui Pyun,Year:
1995
Language:
english
DOI:
10.1109/gaas.1995.528969
File:
PDF, 397 KB
english, 1995