High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage
Van, Ngoc Huynh, Lee, Jae-Hyun, Sohn, Jung Inn, Cha, Seung Nam, Whang, Dongmok, Kim, Jong Min, Kang, Dae JoonVolume:
6
Year:
2014
Language:
english
Journal:
Nanoscale
DOI:
10.1039/c3nr06690h
File:
PDF, 552 KB
english, 2014