Improved reliability of low-temperature polysilicon TFT by...

Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxide

Seok-Woo Lee,, Eugene Kim,, Sang-Soo Han,, Hye Sun Lee,, Duk-Chul Yun,, Kyoung Moon Lim,, Myoung-Su Yang,, Chang-Dong Kim,
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Volume:
24
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2003.811398
Date:
March, 2003
File:
PDF, 264 KB
english, 2003
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