Characterization of Al2O3/GaAs interfaces and thin films...

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 2013 Vol. 31; Iss. 4

Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition

Sah, Ram Ekwal, Tegenkamp, Christoph, Baeumler, Martina, Bernhardt, Frank, Driad, Rachid, Mikulla, Michael, Ambacher, Oliver
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Volume:
31
Year:
2013
Language:
english
Journal:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
DOI:
10.1116/1.4813436
File:
PDF, 2.38 MB
english, 2013
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