[IEEE 2006 14th International Conference on Advanced Thermal Processing of Semiconductors - Kyoto (2006.10.10-2006.10.13)] 2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors - High-Resolution Transmission Electron Microscopy of Interfaces between thin Nickel Layers on Si(001) After Nickel Silicide Formation under Various Annealing Conditions
Isshiki, Toshiyuki, Nishio, Koji, Sasaki, Takashi, Harima, Hiroshi, Yoshimoto, Masahiro, Fukada, Takashi, Yoo, Woo SikYear:
2006
Language:
english
DOI:
10.1109/rtp.2006.367991
File:
PDF, 3.60 MB
english, 2006