Radiation Detection Properties of 4H-SiC Schottky Diodes...

IEEE Transactions on Nuclear Science 2006 / 10 Vol. 53; Iss. 5

Radiation Detection Properties of 4H-SiC Schottky Diodes Irradiated Up to$10^16$n/cm$^2$by 1 MeV Neutrons

Nava, F., Castaldini, A., Cavallini, A., Errani, P., Cindro, V.
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Volume:
53
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2006.882777
Date:
October, 2006
File:
PDF, 304 KB
english, 2006
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