[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps
Meneghini, M., Bertin, M., dal Santo, G., Stocco, A., Chini, A., Marcon, D., Malinowski, P. E., Mura, G., Musu, E., Vanzi, M., Meneghesso, G., Zanoni, E.Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6479035
File:
PDF, 261 KB
english, 2012