High-current-gain InGaAs/InP double-heterojunction bipolar...

IEEE Electron Device Letters 1988 / 05 Vol. 9; Iss. 5

High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy

Sugiura, O., Dentai, A.G., Joyner, C.H., Chandrasekhar, S., Campbell, J.C.
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Volume:
9
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.707
Date:
May, 1988
File:
PDF, 290 KB
english, 1988
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