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[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development
Liau, Geng-Ying, Lin, Heng-Kuang, Chiu, Pei-Chin, Ho, Han-Chieh, Chyi, Jen-Inn, Ko, Chih-Hsin, Kuan, Ta-Ming, Hsieh, Meng-Kuei, Lee, Wen-Chin, Wann, Clement H.Year:
2010
Language:
english
DOI:
10.1109/iciprm.2010.5516381
File:
PDF, 254 KB
english, 2010