Enhanced Hole Mobility in High Ge Content Asymmetrically...

IEEE Electron Device Letters 2010 / 08 Vol. 31; Iss. 8

Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

Gomez, Leonardo, Ni Chléirigh, C, Hashemi, P, Hoyt, J L
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2050574
Date:
August, 2010
File:
PDF, 177 KB
english, 2010
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