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[IEEE 1997 IEEE MTT-S International Microwave Symposium Digest - Denver, CO, USA (8-13 June 1997)] 1997 IEEE MTT-S International Microwave Symposium Digest - High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system
Nagaoka, M., Wakimoto, H., Kawakyu, K., Nishihori, K., Kitaura, Y., Sasaki, T., Kameyama, A., Uchitomi, N.Volume:
3
Year:
1997
Language:
english
DOI:
10.1109/mwsym.1997.596571
File:
PDF, 276 KB
english, 1997