Bipolar Resistive RAM Characteristics Induced by Nickel...

IEEE Electron Device Letters 2012 / 12 Vol. 33; Iss. 12

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Tsai, Tsung-Ming, Chang, Kuan-Chang, Chang, Ting-Chang, Syu, Yong-En, Chuang, Siang-Lan, Chang, Geng-Wei, Liu, Guan-Ru, Chen, Min-Chen, Huang, Hui-Chun, Liu, Shih-Kun, Tai, Ya-Hsiang, Gan, Der-Shin, Y
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2217933
Date:
December, 2012
File:
PDF, 429 KB
english, 2012
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