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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Highly-scaled 3.6-nm ENT trapping layer MONOS device with good retention and endurance
Tsai, C. Y., Lee, T. H., Chin, Albert, Hong Wang,, Cheng, C. H., Yeh, F. S.Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703302
File:
PDF, 515 KB
english, 2010