![](/img/cover-not-exists.png)
[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate
Chen, S.-H., Linten, D., Scholz, M., Hellings, G., Boschke, R., Groeseneken, G., Huang, Y.-C., Ker, M.-D.Year:
2014
Language:
english
DOI:
10.1109/irps.2014.6860651
File:
PDF, 350 KB
english, 2014