[IEEE 2009 IEEE International Electron Devices Meeting...

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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for pH and urea detection

Tseng-Fu Lua,, Jer-Chyi Wanga,, Chao-Sung Laia,, Chia-Ming Yanga,, Min-Hsien Wu,, Chuan-Pu Liu,, Rong-Shie Huang,, Yu-Ching Fang,
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Year:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424289
File:
PDF, 1.09 MB
english, 2009
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