Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes
Kim, Jaekyun, Kim, Joosung, Tak, Youngjo, Chae, Suhee, Kim, Jun-Youn, Park, YoungsooVolume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2280017
Date:
November, 2013
File:
PDF, 645 KB
english, 2013