Boron retarded diffusion in the presence of indium or...

IEEE Electron Device Letters 2002 / 11 Vol. 23; Iss. 11

Boron retarded diffusion in the presence of indium or germanium

Hong-Jyh Li,, Kirichenko, T.A., Kohli, P., Banerjee, S.K., Graetz, E., Tichy, R., Zeitzoff, P.
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Volume:
23
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2002.805005
Date:
November, 2002
File:
PDF, 378 KB
english, 2002
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