Improvement in Electron Overflow of Near-Ultraviolet InGaN...

IEEE Photonics Technology Letters 2011 / 11 Vol. 23; Iss. 21

Improvement in Electron Overflow of Near-Ultraviolet InGaN LEDs by Specific Design on Last Barrier

Kuo, Yen-Kuang, Shih, Ya-Hsuan, Tsai, Miao-Chan, Chang, Jih-Yuan
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Volume:
23
Language:
english
Journal:
IEEE Photonics Technology Letters
DOI:
10.1109/lpt.2011.2165838
Date:
November, 2011
File:
PDF, 605 KB
english, 2011
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