[IEEE International Electron Devices Meeting. Technical...

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[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - Improved performance and reliability of split gate source-side injected flash memory cells

Bhattacharya, S., Lai, K., Fox, K., Chan, P., Worley, E., Sharma, U., Liming Hwang,, Li, G.P.
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Year:
1996
Language:
english
DOI:
10.1109/iedm.1996.553598
File:
PDF, 497 KB
english, 1996
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