Plasma etching optimization of oxide/nitride/oxide...

IEEE Transactions on Semiconductor Manufacturing 2000 / Aug. Vol. 13; Iss. 3

Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices

Cher Liang Cha,, Eng Fong Chor,, Hao Gong,, An Qing Zhang,, Lap Chan,
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Volume:
13
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/66.857949
Date:
January, 2000
File:
PDF, 153 KB
english, 2000
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