[IEEE 2010 IEEE International Conference of Electron...

  • Main
  • [IEEE 2010 IEEE International...

[IEEE 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) - Hong Kong (2010.12.15-2010.12.17)] 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET

Shaodi Wang,, Xinjie Guo,, Lining Zhang,, Chenfei Zhang,, He, Frank, Mansun Chan,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2010
Language:
english
DOI:
10.1109/edssc.2010.5713711
File:
PDF, 1.66 MB
english, 2010
Conversion to is in progress
Conversion to is failed