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[IEEE 2010 IEEE International Conference of Electron Devices and Solid- State Circuits (EDSSC) - Hong Kong (2010.12.15-2010.12.17)] 2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Analytical subthreshold channel potential model of asymmetric gate underlap gate-all-around MOSFET
Shaodi Wang,, Xinjie Guo,, Lining Zhang,, Chenfei Zhang,, He, Frank, Mansun Chan,Year:
2010
Language:
english
DOI:
10.1109/edssc.2010.5713711
File:
PDF, 1.66 MB
english, 2010