![](/img/cover-not-exists.png)
[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Experimental investigation on the origin of direction dependence of Si (110) hole mobility utilizing ultra-thin body pMOSFETs
Shimizu, Ken, Saraya, Takuya, Hiramoto, ToshiroYear:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796615
File:
PDF, 316 KB
english, 2008