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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - (110) channel, SiON gate-dielectric PMOS with record high Ion=1 mA/μm through channel stress and source drain external resistance (Rext) engineering
Yang, B., Waite, A., Yin, H., Yu, J., Black, L., Chidambarrao, D., Domenicucci, A., Wang, X., Ku, S. H., Wang, Y., Meer, H. V., Kim, B., Nayfeh, H., Kim, S.D., Tabakman, K., Pal, R., Nummy, K., GreeneYear:
2007
Language:
english
DOI:
10.1109/iedm.2007.4418927
File:
PDF, 3.53 MB
english, 2007