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[IEEE 2005 IEEE Asian Solid-State Circuits Conference - Hsinchu, Taiwan (2005.11.1-2005.11.1)] 2005 IEEE Asian Solid-State Circuits Conference - SRAM Circuit with Expanded Operating Margin and Reduced Stand-by Leakage Current Using Thin-BOX FD-SOI Transistors
Yamaoka, Masanao, Tsuchiya, Ryuta, Kawahara, TakayukiYear:
2006
Language:
english
DOI:
10.1109/asscc.2005.251677
File:
PDF, 495 KB
english, 2006