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[IEEE Proceedings of International Reliability Physics Symposium - Dallas, TX, USA (1996.04.30-1996.05.2)] Proceedings of International Reliability Physics Symposium RELPHY-96 - Field enhanced oxide charge detrapping in n-MOSFET's
Tahui Wang,, Tse-En Chang,, Lu-Ping Chiang,, Chimoon Huang,Year:
1996
Language:
english
DOI:
10.1109/relphy.1996.492071
File:
PDF, 352 KB
english, 1996