Nonvolatile Charge-Trap Memory Transistors With Top-Gate Structure Using In–Ga–Zn-O Active Channel and ZnO Charge-Trap Layer
Bak, Jun Yong, Ryu, Min-Ki, Park, Sang Hee Ko, Hwang, Chi Sun, Yoon, Sung MinVolume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2301800
Date:
March, 2014
File:
PDF, 747 KB
english, 2014