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[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - 1700 V-IGBT3: field stop technology with optimized trench structure $trend setting for the high power applications in industry and traction
Pfaffenlehner, M., Laska, T., Mallwitz, R., Mauder, A., Pfirsch, F., Schaeffer, C.Year:
2000
Language:
english
DOI:
10.1109/ispsd.2002.1016182
File:
PDF, 313 KB
english, 2000