[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Dynamic oxide current relaxation spectroscopy for thin insulator MOS structure under Fowler-Nordheim stresses
Mingzhen Xu,, Changhua Tan,, Yandong He,, Xiaowei Liu,, Zhiyun Chen,, Xiaorong Duan,, Yangyuan Wang,Year:
1995
Language:
english
DOI:
10.1109/icsict.1995.499278
File:
PDF, 269 KB
english, 1995