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[IEEE 2013 25th International Conference on Microelectronics (ICM) - Beirut, Lebanon (2013.12.15-2013.12.18)] 2013 25th International Conference on Microelectronics (ICM) - Drain induced barrier lowering (DIBL) accurate model for nanoscale Si-MOSFET transistor
Al-Mistarihi, Mamoun F., Rjoub, Abdoul, Al-Taradeh, Nedal R.Year:
2013
Language:
english
DOI:
10.1109/icm.2013.6735011
File:
PDF, 1.20 MB
english, 2013