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Tetragonal $\hbox{ZrO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stack as High-$\kappa$ Gate Dielectric for Si-Based MOS Devices
Wu, Yung-Hsien, Chen, Lun-Lun, Lyu, Rong-Jhe, Li, Ming-Yen, Wu, Hsiao-CheVolume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2053191
Date:
September, 2010
File:
PDF, 330 KB
english, 2010