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[IEEE IEDM 2008. IEEE International Electron Devices Meeting - San Francisco, CA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Transient effects of delay, switching and recovery in phase change memory (PCM) devices
Lavizzari, S., Ielmini, D., Sharma, D., Lacaita, A.L.Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796655
File:
PDF, 371 KB
english, 2008