InAlAs/InGaAs/InP HFET with suppressed impact ionization...

IEEE Electron Device Letters 1996 / 10 Vol. 17; Iss. 10

InAlAs/InGaAs/InP HFET with suppressed impact ionization using dual-gate cascode-devices

Daumann, W., Ellrodt, P., Brockerhoff, W., Bertenburg, R., Reuter, R., Auer, U., Molls, W., Tegude, F.-J.
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Volume:
17
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.537084
Date:
October, 1996
File:
PDF, 316 KB
english, 1996
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