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[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - Impact of fin height variations on SRAM yield
Dobrovolny, P., Zuber, P., Miranda, M., Bardon, M. G., Chiarella, T., Buchegger, P., Mercha, K., Verkest, D., Steegen, A., Horiguchi, N.Year:
2012
Language:
english
DOI:
10.1109/vlsi-tsa.2012.6210168
File:
PDF, 382 KB
english, 2012