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[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - The impact of bias temperature instability for direct-tunneling ultra-thin gate oxide on MOSFET scaling
Kimizuka, N., Yamamoto, T., Mogami, T., Yamaguchi, K., Imai, K., Horiuchi, T.Year:
1999
Language:
english
DOI:
10.1109/VLSIT.1999.799346
File:
PDF, 196 KB
english, 1999