[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Transient 3D Simulation of Single Event Latchup in Deep Submicron CMOS-SRAMs
Gawlina, Y., Borucki, L., Georgakos, G., Wachutka, G.Year:
2009
Language:
english
DOI:
10.1109/sispad.2009.5290213
File:
PDF, 1.60 MB
english, 2009