Charge-collection characteristics of GaAs heterostructure...

IEEE Transactions on Nuclear Science 1996 / 6 Vol. 43; Iss. 3

Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

McMorrow, D., Weatherford, T.R., Knudson, A.R., Buchner, S., Melinger, J.S., Lan Hu Tran,, Campbell, A.B., Marshall, P.W., Dale, C.J., Peczalski, A., Baier, S.
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Volume:
43
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.510734
Date:
June, 1996
File:
PDF, 659 KB
english, 1996
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