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Relaxation of Si-SiO/sub 2/ interfacial stress in bipolar screen oxides due to ionizing radiation
Witczak, S.C., Galloway, K.F., Schrimpf, R.D., Suehle, J.S.Volume:
42
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.488767
Date:
January, 1995
File:
PDF, 1.09 MB
english, 1995