[Japan Soc. Appl. Phys 2001 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (12-14 June 2001)] 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) - Asymmetric source/drain extension transistor structure for high performance sub-50 nm gate length CMOS devices
Ghani, T., Mistry, K., Packan, P., Armstrong, M., Thompson, S., Tyagi, S., Bohr, M.Year:
2001
Language:
english
DOI:
10.1109/vlsit.2001.934925
File:
PDF, 248 KB
english, 2001