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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - A highly scaled, high performance 45 nm bulk logic CMOS technology with 0.242 μm2 SRAM cell
Cheng, Kuan-Lun, Wu, C. C., Wang, Y. P., Lin, D. W., Chu, C. M., Tarng, Y. Y., Lu, S. Y., Yang, S. J., Hsieh, M. H., Liu, C. M., Fu, S. P., Chen, J. H., Lin, C. T., Lien, W. Y., Huang, H. Y., Wang, P.Year:
2007
Language:
english
DOI:
10.1109/IEDM.2007.4418913
File:
PDF, 2.41 MB
english, 2007