Is Gate Line Edge Roughness a First-Order Issue in Affecting the Performance of Deep Sub-Micro Bulk MOSFET Devices?
Xiong, S., Bokor, J., Xiang, Q., Fisher, P., Dudley, I., Rao, P., Wang, H., En, B.Volume:
17
Language:
english
Journal:
IEEE Transactions on Semiconductor Manufacturing
DOI:
10.1109/tsm.2004.831560
Date:
August, 2004
File:
PDF, 744 KB
english, 2004