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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation
Yan Ny Tan,, Wai Kin Chim,, Wee Kiong Choi,, Moon Sig Joe,, Tsu Hau Ng,, Byung Jin Cho,Year:
2004
Language:
english
DOI:
10.1109/iedm.2004.1419323
File:
PDF, 288 KB
english, 2004