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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation
Nobuyuki Sugii,, Ryuta Tsuchiya,, Takashi Ishigaki,, Yusuke Morita,, Hiroyuki Yoshimoto,, Kazuyoshi Torii,, Shin'ichiro Kimura,Year:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796664
File:
PDF, 809 KB
english, 2008