[IEEE IEEE International Electron Devices Meeting - San...

  • Main
  • [IEEE IEEE International Electron...

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 μm/sup 2/ 6-T SRAM cell

Kuhn, K., Agostinelli, M., Ahmed, S., Chambers, S., Cea, S., Christensen, S., Fischer, P., Gong, J., Kardas, C., Letson, T., Henning, L., Murthy, A., Muthali, H., Obradovic, B., Packan, P., Pae, S.W.,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175782
File:
PDF, 260 KB
english, 2002
Conversion to is in progress
Conversion to is failed