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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 μm/sup 2/ 6-T SRAM cell
Kuhn, K., Agostinelli, M., Ahmed, S., Chambers, S., Cea, S., Christensen, S., Fischer, P., Gong, J., Kardas, C., Letson, T., Henning, L., Murthy, A., Muthali, H., Obradovic, B., Packan, P., Pae, S.W.,Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175782
File:
PDF, 260 KB
english, 2002