[IEEE 2000 IEEE International Integrated Reliability...

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[IEEE 2000 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA (23-26 Oct. 2000)] 2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) - Design rule limitations due to hot carrier degradation of NMOS transistor under DC stress

Regis, D., Dekeukeleire, C., Vanderbauwhede, W., Demesmaeker, A., Pergoot, A.
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Year:
2000
Language:
english
DOI:
10.1109/irws.2000.911892
File:
PDF, 426 KB
english, 2000
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