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[IEEE International Symposium on VLSI Technology Systems and Applications - Taipei, Taiwan (8-10 June 1999)] 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) - Experimental investigation on the HBM ESD characteristics of CMOS devices in a 0.35-μm silicided process
Tung-Yang Chen,, Ming-Dou Ke,, Chung-Yu Wu,Year:
1999
Language:
english
DOI:
10.1109/vtsa.1999.785993
File:
PDF, 372 KB
english, 1999