Thick GaN Epitaxial Growth with Low Dislocation Density by...

Japanese Journal of Applied Physics 1997 / 7 Vol. 36; Iss. Part 2, No

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Usui, Akira, Sunakawa, Haruo, Sakai, Akira, Yamaguchi, A. Atsushi
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.L899
Date:
July, 1997
File:
PDF, 1.71 MB
1997
Conversion to is in progress
Conversion to is failed