[IEEE 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - Takamatsu, Japan (2010.05.31-2010.06.4)] 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) - III-V MOSFETs: Scaling laws, scaling limits, fabrication processes
Rodwell, M. J. W., Singisetti, U., Wistey, M., Burek, G. J., Carter, A., Baraskar, A., Law, J., Thibeault, B. J., Kim, Eun Ji, Shin, B., Lee, Yong-ju, Steiger, S., Lee, S., Ryu, H., Tan, Y., Hegde, G.Year:
2010
Language:
english
DOI:
10.1109/iciprm.2010.5515914
File:
PDF, 244 KB
english, 2010