[IEEE 2006 International Electron Devices Meeting - San...

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[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Strained Silicon-Germanium-on-Insulator N-MOSFETs Featuring Lattice Mismatched Source/Drain Stressor and High-Stress Silicon Nitride Liner

Wang, Grace Huiqi, Toh, Eng-Huat, Toh,, Hoe, Keat Mun, Tripathy, S., Balakumar, S., Lo, Guo-Qiang, Samudra, Ganesh, Yeo, Yee-Chia
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Year:
2006
Language:
english
DOI:
10.1109/iedm.2006.346814
File:
PDF, 695 KB
english, 2006
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